Ion-Induced Modulation of Channel Currents in AlGaN/GaN High-Electron-Mobility Transistors
- 21 February 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 183 (2) , R10-R12
- https://doi.org/10.1002/1521-396x(200102)183:2<r10::aid-pssa999910>3.0.co;2-i
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The polarization-induced electron gas in a heterostructureSemiconductor Science and Technology, 2000
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructuresJournal of Applied Physics, 2000
- High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxyApplied Physics Letters, 1999