Planar photodiodes made from vapour-phase epitaxial In x Ga 1− x As
- 12 April 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (8) , 238-240
- https://doi.org/10.1049/el:19790169
Abstract
Planar photodiodes for the 1.0–1.3 μm wavelength range have been fabricated by diffusing Zn into vapour-phase epitaxial InxGa1−xAs grown on a GaAs substrate. For compositions x=0−0.31, the dark current and spectral response are reported. The dark-current density for x=0.17 was as low as 5.4 × 10−6 A/cm2 at VB/2.Keywords
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