Degradation in Quality of Very Thin Gate Oxide by Arsenic Ion Implantation
- 1 March 1987
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 134 (3) , 681-684
- https://doi.org/10.1149/1.2100531
Abstract
Ion implantation into structure is known to create the damage in the film and Si substrate. Degradation in quality of very thin oxide by arsenic ion implantation is discussed. The degradation phenomena are found to be an increase of the leakage current and a decrease of the dielectric breakdown voltage. A temperature dependence of conductivity suggests that barrier height of trapped states is about 1.0 eV. The total conduction current of implanted thin oxide is expressed by the sum of the P‐F component which flows in the degraded region and the F‐N component which flows in the other region.Keywords
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