Lateral dopant diffusion in implanted buried-oxide structures

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Abstract
During fabrication of short-channel transistors in silicon films above implanted buried oxides, the possibility of rapid lateral dopant diffusion in the damaged region near the bottom of the silicon layer is of concern. To investigate the possibility of such enhanced lateral diffusion, arsenic, phosphorus, and boron were diffused into silicon films on buried oxides. No excess lateral diffusion was observed even for the phosphorus diffusion, which penetrated through the thickness of the film in a fraction of the diffusion time.

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