n-ITO/p-InGaAsP Solar Cell Fabricated on GaAs Substrate
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A) , L91-93
- https://doi.org/10.1143/jjap.26.l91
Abstract
N-ITO/p-InGaAsP solar cells have been fabricated. Lattice-matched LPE growth of InGaAsP layers on GaAs has been carried out before the ITO film is deposited by rf sputtering. The best cell without an antireflection coating exhibits a conversion efficiency of 9.6% under AMI illumination and the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.6 V, 24.5 mA/cm2, and 0.653, respectively.Keywords
This publication has 10 references indexed in Scilit:
- Fabrication methods for InGaAsP/GaAs visible laser structure with AlGaAs burying layers grown by liquid-phase epitaxyJournal of Applied Physics, 1986
- 17.2-percent efficient (AMO) p+-i-n InP homojunction solar cellsIEEE Electron Device Letters, 1986
- 21% (one sun, air mass zero) 4 cm2 GaAs space solar cellsApplied Physics Letters, 1986
- High efficiency homojunction InP solar cellsApplied Physics Letters, 1985
- High efficiency indium tin oxide/indium phosphide solar cellsApplied Physics Letters, 1985
- Sputtered oxide/indium phosphide junctions and indium phosphide surfacesJournal of Applied Physics, 1980
- The operation of the semiconductor-insulator-semiconductor solar cell: ExperimentJournal of Applied Physics, 1979
- A possible explanation for the photovoltaic effect in indium tin oxide on InP solar cellsJournal of Applied Physics, 1978
- Properties of Sn‐Doped In2 O 3 Films Prepared by RF SputteringJournal of the Electrochemical Society, 1975
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956