Field Dependent Losses of Electrons and Holes by Bimolecular Volume Recombination in the Excitation Layer of Anthracene Single Crystals Studied by Drift Current Pulses
- 16 July 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 6 (1) , 231-241
- https://doi.org/10.1002/pssa.2210060126
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Anisotropy of the Singlet Transitions of Crystalline AnthraceneThe Journal of Chemical Physics, 1970
- Field and Temperature Dependent Recombination in AnthraceneApplied Optics, 1969
- Generation of Charge Carriers in Anthracene with Polarized LightThe Journal of Chemical Physics, 1967
- Nichtstationäre Photoleitung in AnthrazenThe European Physical Journal A, 1967
- Intrinsic Photoconduction in Anthracene CrystalsThe Journal of Chemical Physics, 1966
- Multiple-Charge-Carrier Generation Processes in AnthraceneThe Journal of Chemical Physics, 1965
- The Effects of Temperature and Electric Field for the Photo-Generation of Free Carriers in AnthraceneJournal of the Physics Society Japan, 1964
- Charge Carrier Production and Mobility in Anthracene CrystalsPhysical Review B, 1960
- Hole and Electron Drift Mobilities in AnthraceneThe Journal of Chemical Physics, 1960
- Die niedersten elektronischen Anregungszustände des Anthracen-KristallsZeitschrift für Naturforschung A, 1958