Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Preprint

14 June 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9806162

Abstract

Using uniaxial stress to tune Si:B through the metal-insulator transition we find the conductivity at low temperatures shows an excellent fit to scaling with temperature and stress on both sides of the transition. The scaling functions yield the conductivity in the metallic and insulating phases, and allow a reliable determination of the temperature dependence in the critical regions on both sides of the transition.

Keywords

METAL INSULATOR TRANSITION
UNIAXIAL STRESS
TEMPERATURE
RELIABLE

All Related Versions

Version 1, 1998-06-12, ArXiv
Version 2, 1998-06-14, ArXiv
Published version: Physical Review Letters, 82 (1), 137.

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