Subnanosecond-pulse generator with variable pulsewidth using avalanche transistors
- 9 January 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (1) , 21-23
- https://doi.org/10.1049/el:19750016
Abstract
The letter describes a pulse generator with epitaxial silicon planar transistors working in the avalanche-breakdown mode. The risetime is 150 ps and the fall time 200 ps. The pulse-width can be varied continuously between 0.3 and 120 ns, without changing the maximum amplitude of about 15 V. Simple rules for the exact design of the circuitry are given.Keywords
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