Insulating Tubular BN Sheathing on Semiconducting Nanowires
- 30 October 2003
- journal article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 125 (47) , 14226-14227
- https://doi.org/10.1021/ja0381196
Abstract
An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si−SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.Keywords
This publication has 9 references indexed in Scilit:
- Synthesis of TiSe2 Nanotubes/NanowiresAdvanced Materials, 2003
- Room-Temperature Ultraviolet Nanowire NanolasersScience, 2001
- Composite Nanostructures Based on Template-Grown Boron Nitride NanotubulesChemistry of Materials, 1999
- Filling carbon nanotubes with metals by the arc-discharge method: the key role of sulfurZeitschrift für Physik B Condensed Matter, 1998
- Stability and Band Gap Constancy of Boron Nitride NanotubesEurophysics Letters, 1994
- A simple chemical method of opening and filling carbon nanotubesNature, 1994
- Capillarity and Wetting of Carbon NanotubesScience, 1994
- Capillarity-induced filling of carbon nanotubesNature, 1993
- Growth of whiskers of hexagonal boron nitrideJournal of Crystal Growth, 1981