GaAs opto-thyristor for pulsed power applications
- 1 March 1991
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1378, 95-100
- https://doi.org/10.1117/12.25066
Abstract
An optically gated thyristor based on GaAs has been designed fabricated and investigated for pulsed power applications. The device included a 200-pm semi-insulating base layer and was triggered with an 848-nm 1-pJ 100-nsec laser diode. The DC blocking voltage of the thyristor was observed to be V the peak current 300 A and the current rate of rise A/sec. Lock-on effect was also observed and is discussed.Keywords
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