Abstract
Indium alloyed TbFe amorphous films for use as a magneto‐optic memory are proposed and studied. These TbFeIn films show strong resistance to corrosion and oxidation. Indium is effective in suppressing oxygen diffusion into the films. An oxygen diffusion coefficient of 5×1025 m2/s is calculated for TbFeIn films incubated at room temperature. Activation energy is 1.3 eV. This value is over 1.5 times larger than that of TbFe films, where the value is obtained with ellipsometry measurements by R. Allen and G. A. N. Connell [J. Appl. Phys. 5 3, 2353 (1982)].

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