Thermal response of integrated circuit input devices to an electrostatic energy pulse

1 April 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (4) , 877-882
https://doi.org/10.1109/t-ed.1987.23010

Abstract

The thermal response to an electro static discharge (ESD) pulse in silicon is presented and discussed using the three-dimensional heat equation and a set of boundary conditions that physically simulate the behavior of input protection mechanisms commonly used in integrated circuits. Waveforms that vary exponentially and linearly in time are quantitatively analyzed for a spatially localized hot spot and for an even distribution of heat along a circular periphery. The results confirm recent observations that deviation from the smooth and slow exponential waveform due to parasitic oscillations and coupling is a major cause of ESD related damage.

Keywords

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