Time-resolved study of carrier capture and recombination in monolayer Be δ-doped GaAs

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Abstract
The first measurements of subpicosecond dynamics of carrier capture and decay in Be δ‐doped GaAs structures with p‐doping density ranging from 6×1012 to 2×1014 cm−2 and spatial distribution on monolayer scale show that photoexcited carriers are captured in the δ‐doped layer in <1 ps. Luminescence decay rates show a strong dependence on energy of the hole in the two‐dimensional Fermi gas. We attribute this to a change in the spatial electron‐hole overlap resulting from band‐mixing effects. We show that Be density fluctuations lead to strong carrier localization.

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