Pb Mg1/3 Nb2/3 O3 (PMN) MULTILAYER CAPACITORS

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Abstract
Multilayer capacitors were made from a 3PbO - MgO - Nb2O5 mixing doped with lead oxide, and a 70 Ag - 30 Pd alloy as internal electrode. The phase nature and distribution in chips depend on the additions of lead oxide (6-8 wt %) and the sintering step (TMax : 850 - 1000°C, in air or in a PbO controlled atmosphere). Through a chip cross section, one can note a pyrochlore type phase especially developped in the surface layer while the chip active area is essentially constituted of a perovskite type phase (PMN) and of an eventual glassy phase based on lead oxide, which strongly lowers the chip dielectric constant

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