Rutherford backscattering and channelling studies of erbium implanted SIMOX structures
- 1 April 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 47 (2) , 155-159
- https://doi.org/10.1016/0168-583x(90)90024-o
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Lattice locations of erbium implants in siliconSolid State Communications, 1989
- Characteristics of rare-earth element erbium implanted in siliconApplied Physics Letters, 1989
- Phenomenological theory of explosive solid phase crystallization of amorphous siliconPhysica Status Solidi (a), 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983