Demonstration of the importance of the oxide breakup in polysilicon-contacted-emitter modeling
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (9) , 2112-2117
- https://doi.org/10.1109/16.83737
Abstract
No abstract availableKeywords
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