Second generation I/sup 2/L/MTL: a 20 ns process/structure
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (2) , 93-101
- https://doi.org/10.1109/jssc.1977.1050854
Abstract
A high performance, second generation I/SUP 2/L/MTL gate for digital LSI applications with TTL compatibility has successfully been designed, characterized, and demonstrated fully functional over a wide current range and the military temperature range of -55 to 125/spl deg/C. Performance is measured using an in-line five-collector gate having one end injector. The gate performed with the following characteristics at 100 /spl mu/A injector current: /spl beta//SUB U//SUP eff//spl ges/4 for all collectors at 25/spl deg/C and /spl ges/2.5 at -55/spl deg/C, /spl alpha//SUB rec///spl alpha//SUB F//spl cong/0.58 and /spl tau/~/SUB d/=18-20 ns from -55 to 125/spl deg/C, and a speed-power product of 1.4 pJ at 25/spl deg/C. At low injector currents, a constant speed-power product of 0.36 pJ at 25/spl deg/ was obtained.Keywords
This publication has 12 references indexed in Scilit:
- On the electrical properties of the I2L n-p-n transistorIEEE Transactions on Electron Devices, 1976
- Limitations of the CV technique for ion-implanted profilesIEEE Transactions on Electron Devices, 1975
- Device physics of integrated injection logicIEEE Transactions on Electron Devices, 1975
- Terminal-oriented model for merged transistor logic (MTL)IEEE Journal of Solid-State Circuits, 1974
- Integrated injection logic-present and futureIEEE Journal of Solid-State Circuits, 1974
- Ion-implanted semiconductor devicesProceedings of the IEEE, 1974
- Transport equations in heavily doped silicon, and the current gain of a bipolar transistorSolid-State Electronics, 1973
- Peripheral and diffused layer effects on doping profilesIEEE Transactions on Electron Devices, 1972
- The influence of debye length on the C-V measurement of doping profilesIEEE Transactions on Electron Devices, 1971
- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970