Miniband transport in GaAs-AlAs superlattices
- 1 October 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 54-63
- https://doi.org/10.1117/12.20728
Abstract
We report on the investigation of the miniband transport regime in GaAs-AlAs superlattices by electrical time-of-flight experiments. The temperature dependence of the low-field drift mobility is used to obtain information about the underlying transport mechanisms. The photocurrent as a function of the applied field can be fitted over a wide temperature range with a modified Kazarinov-Suris model.Keywords
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