High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels
- 21 May 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 15 (6) , 846-848
- https://doi.org/10.1109/lpt.2003.811339
Abstract
The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-/spl mu/m optical illumination.Keywords
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