Effects of water vapor anneal on MIS devices made of nitrided gate dielectrics
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High quality SiO/sub 2//Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphereIEEE Electron Device Letters, 1995
- Highly Reliable Silicon Nitride Thin Films Made by Jet Vapor DepositionJapanese Journal of Applied Physics, 1995