A novel quasiplanar process for the fabrication of GaInAs/InP receiver OEICs is reported. This is based on a single-step MOVPE growth, allowing independent optimisation of both optical and electronic components. A monolithic receiver front-end comprising pin photodiode, load resistor and inverter amplifier fabricated using this technology shows a sensitivity of −32.7dBm at 560 Mbit/s and 1.3 μm wavelength.