Secondary Defects in 2 MeV Phosphorus Implanted Silicon
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6A) , L474
- https://doi.org/10.1143/jjap.25.l474
Abstract
Annealing behavior of secondary defects in 2 MeV phosphorus ion implanted (100) silicon has been investigated through cross-sectional and plan-view TEM observation at doses of 2×1013 1×1014 and 5×1014 ions/cm2. The critical dose for generating secondary defects is between 2×1013 and 1×1014 ions/cm2. The maximum defect density is located at a mean depth of 2.1 µm from the surface, a location is deeper than that of the projected range of phosphorus ions and the primary defect peak. This defect position in the crystal is constant under all annealing conditions (e.g., a temperature range of between 750 and 1100°C, annealing time of up to 6780 min at 1000°C), although the vertical distribution width of defects changes with both annealing temperature and time.Keywords
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