Segregation and drift of arsenic in SiO2 under the influence of a temperature gradient
- 16 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (11) , 664-666
- https://doi.org/10.1063/1.98114
Abstract
We have found that arsenic implanted into SiO2 segregates at high temperatures into As‐rich spherical inclusions of 50–500 Å in diameter, provided that there is no free oxygen in the SiO2 and the initial As concentration exceeds 1 at. %. The phase separation suppresses the diffusion of arsenic, even at temperatures as high as 1400 °C. We have discovered, however, that the As‐rich inclusions can be easily moved in a temperature gradient. They migrate towards the heat source at a rate of 2300 Å/h in a gradient of 0.14 °C/μm, at 1405 °C, permitting their efficient removal from the oxide and into silicon.Keywords
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