Analysis of aluminum gallium arsenide laser diodes failing due to nonradiative regions behind the facets
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Reliability studies have established the long life capability of AlGaAs laser diodes (15-25 years) and have identified many failure mechanisms. One failure mechanism in improperly facet-passivated devices is the formation of nonradiative regions behind the facet. To study the dynamics of this process, devices with intentionally uncoated facets were tested. The study indicated that the nonradiative regions behind the facets are probably due to an oxide growth on the facets. The nonradiative regions occurred relatively early in the test and then saturated. The effect on optical power was an initially rapid, but saturable decrease that correlated with nonradiative region growth. The observed saturation time of the nonradiative regions was inversely related to the square of the initial optical power. The authors emphasize the importance of correctly passivating and protecting the facet with coatings to prevent oxidation and the formation of nonradiative regions.<>Keywords
This publication has 17 references indexed in Scilit:
- Reliability Of AlGaAs/GaAs Laser Diodes Grown By Metalorganic Chemical Vapor DepositionPublished by SPIE-Intl Soc Optical Eng ,1988
- Statistical analysis of aging-induced degradation (or lifetime) variation in (Al, Ga)As/GaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1983
- The reliability of (AlGa)As CW laser diodesIEEE Journal of Quantum Electronics, 1980
- Reduction of GaAs surface recombination velocity by chemical treatmentApplied Physics Letters, 1980
- Acceleration of the gradual degradation in (GaAl)As double-heterostructure lasers as an exponent of the value of the driving currentJournal of Applied Physics, 1979
- GaAs laser reliability and protective facet coatingsJournal of Applied Physics, 1979
- Catastrophic damage of AlxGa1−xAs double-heterostructure laser materialJournal of Applied Physics, 1979
- The temperature dependence of degradation mechanisms in long-lived (GaAl)As DH lasersJournal of Applied Physics, 1978
- Catastrophic failure in GaAs double-heterostructure injection lasersJournal of Applied Physics, 1974
- Role of optical flux and of current density in gradual degradation of GaAs injection lasersIEEE Journal of Quantum Electronics, 1969