Incorporation of phosphorus and boron in amorphous silicon measured with (p, γ) resonant reactions
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 512-515
- https://doi.org/10.1016/0168-583x(86)90353-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Doping mechanism ina-Si:HPhysical Review B, 1985
- Energy levels of light nuclei A = 11–12Nuclear Physics A, 1985
- The existence of 3-fold coordinated phosphorus in heavily doped a-Si:HSolar Energy Materials, 1984
- The reaction 36S(p, γ)37ClNuclear Physics A, 1984
- The incorporation of phosphorus in amorphous siliconJournal of Non-Crystalline Solids, 1983
- Determination of the boron concentration in a-Si:H films by nuclear reaction methodSolid State Communications, 1981
- (p, γ) Resonance strengths in the s-d shellNuclear Physics A, 1979
- Characterization of amorphous semiconducting silicon-boron alloys prepared by plasma decompositionPhysical Review B, 1979
- Energy levels of A = 21–44 nuclei (VI)Nuclear Physics A, 1978
- Substitutional doping of amorphous siliconSolid State Communications, 1975