Hydrogen bonding in silicon-hydrogen alloys

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Abstract
Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1_ x . In contrast, for material deposited on to a substrate at a temperature T s⩾250°C, the hydrogen is incorporated onto Si-sites containing predominantlv one H-atom.

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