Excess carrier densities in amorphous-silicon doping-modulated multilayers
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12) , 8433-8435
- https://doi.org/10.1103/physrevb.33.8433
Abstract
The majority and minority carrier densities in doping-modulated multilayers of amorphous hydrogenated silicon are calculated as a function of the sublayer thickness and the light illumination level. The results are used to estimate the optimum sublayer thickness for spatial separation of photo excited holes and electrons, and for comparison with the observation of light-induced excess conductivity.Keywords
This publication has 9 references indexed in Scilit:
- Theoretical analyses of space-charge doping in amorphous semiconductor superlattices. II. Compositional superlatticesPhysical Review B, 1985
- Theoretical analyses of space-charge doping in amorphous semiconductor superlattices. I. Doping superlatticesPhysical Review B, 1985
- Persistent Photoconductivity in Doping-Modulated Amorphous SemiconductorsPhysical Review Letters, 1984
- Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond statePhilosophical Magazine Part B, 1984
- Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structuresJournal of Non-Crystalline Solids, 1984
- Bandgap and resistivity of amorphous semiconductor superlatticesJournal of Non-Crystalline Solids, 1984
- Properties of amorphous semiconducting multilayer filmsJournal of Non-Crystalline Solids, 1984
- Evidence for Lattice-Mismatch—Induced Defects in Amorphous Semiconductor HeterojunctionsPhysical Review Letters, 1984
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983