Thickness dependence of photoelectrical properties of intrinsic amorphous silicon
- 30 April 1988
- journal article
- Published by Elsevier in Solar Cells
- Vol. 23 (3-4) , 191-199
- https://doi.org/10.1016/0379-6787(88)90100-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Thickness dependences of properties of P- and B-doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1984
- Transient-photocurrent studies inPhysical Review B, 1984
- Luminescence phenomena in a-Si:H p-i-n junctionsJournal of Non-Crystalline Solids, 1983
- Time-resolved photoluminescence spectra in sputtereda-Si:HPhysical Review B, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Photoconductivity and transport in hydrogenated amorphous siliconSolar Cells, 1980
- Exponential absorption edge in hydrogenated α-Si filmsSolid State Communications, 1980
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Thickness dependence of the photoconductivity of phosphorus-doped hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Thermalization and recombination of excess carriers in A-Si:HJournal of Non-Crystalline Solids, 1980