Pressure Dependence of the Resistivity of Silicon
- 15 June 1955
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 98 (6) , 1755-1757
- https://doi.org/10.1103/physrev.98.1755
Abstract
The variation of resistivity of high-purity single crystals of silicon has been measured as a function of hydrostatic pressure in the intrinsic range. The results are interpreted to give a decrease in energy gap between conduction and valence bands with applied pressure.Keywords
This publication has 5 references indexed in Scilit:
- Pressure Dependence of the Resistivity of GermaniumPhysical Review B, 1954
- Temporary Traps in Silicon and GermaniumPhysical Review B, 1953
- Further Measurements of the Effect of Pressure on the Electrical Resistance of GermaniumProceedings of the American Academy of Arts and Sciences, 1953
- The Electric Resistance to 30,000 Kg/Cm² of Twenty Nine Metals and Intermetallic CompoundsProceedings of the American Academy of Arts and Sciences, 1951
- The Resistance of Nineteen Metals to 30,000 Kg/CmProceedings of the American Academy of Arts and Sciences, 1938