Two-Dimensional Indirect Exciton in Layer-Type Semiconductor GaSe
- 23 June 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 22 (25) , 1379-1381
- https://doi.org/10.1103/physrevlett.22.1379
Abstract
Evidence for the presence of two-dimensional indirect excitions is presented in terms of the absorption spectra in GaSe. The phonon and exciton parameters at the point are determined.
Keywords
This publication has 5 references indexed in Scilit:
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- Nuclear Magnetic Resonance of Paramagnetic Co3O4. II. Theory of the NMR ShiftJournal of the Physics Society Japan, 1966
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957