High-resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams

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Abstract
In 〈100〉 cross‐sectional high‐resolution electron microscopy of the GaAs/AlAs heterointerface, images were formed only with chemically sensitive (200) and transmitted beams. The atomic configuration of the GaAs/AlAs interface can be characterized by the variation of (200) fringes at atomic resolutions. The large difference in the (200) fringe intensity between GaAs and AlAs layers greatly improves the visibility at the interface and relaxed the restriction on sample thickness. It is also shown that this technique is effective in observing the heterointerface of close compositions such as GaAs/AlGaAs.