Photolithographic fabrication of micron-dimension porous Si structures exhibiting visible luminescence
- 3 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 619-620
- https://doi.org/10.1063/1.106572
Abstract
A procedure for the patterned synthesis of porous Si exhibiting visible luminescence is described. Anodic electrochemical etch of n- or p-type Si in ethanol/HF solution leads directly to porous Si that luminesces with λmax between 750 and 650 nm. Positive and negative patterns of luminescent porous Si are etched into n- and p-type Si samples, respectively, by projecting a high-contrast image on the electrode surface during the etching process. Lithographic resolution obtained is on the order of 20 μm.Keywords
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