Exchange instabilities in ann-type silicon inversion layer
- 1 February 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (3) , 1383-1387
- https://doi.org/10.1103/physrevb.17.1383
Abstract
We investigate the possibility that in a semiconducting surface inversion layer the ground state has charge-density waves in each of the two equivalent subbands. The two charge-density waves are identical except that they are completely out of phase with each other. Such a state, referred to as a valley-density wave (VDW), need not be accompanied by a lattice distortion. A density-functional formalism is used to study the instability toward formation of a VDW ground state. It is found that under certain conditions the VDW state has a lower energy than the paramagnetic state. A similar conclusion is drawn on the basis of Hartree-Fock treatment of VDW state.Keywords
This publication has 9 references indexed in Scilit:
- Theory of the Spin Susceptibility of an Inhomogeneous Electron Gas via the Density Functional FormalismCanadian Journal of Physics, 1975
- Ground-state energy calculation of the electron-hole liquid in semiconductorsIl Nuovo Cimento B (1971-1996), 1974
- Spin density wave and soft phonon mode from nesting Fermi surfacesJournal of Physics F: Metal Physics, 1973
- Wave-number dependence of the static screening function of an interacting electron gas. II. Higher-order exchange and correlation effectsCanadian Journal of Physics, 1970
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Exchange and Correlation Instabilities of Simple MetalsPhysical Review B, 1968
- Polarizability of a Two-Dimensional Electron GasPhysical Review Letters, 1967
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964