Pseudodonor nature of the DI defect in 4H-SiC

We use the recent findings about the pseudodonor character of the ${\mathrm{D}}_{\mathrm{I}}$ defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the ${\mathrm{D}}_{\mathrm{I}}$ defect indeed is correlated to such a hole trap. In addition, we show that the ${\mathrm{D}}_{\mathrm{I}}$ defect is not correlated to the $Z_{\text{1/2}}$ electron trap, in contrast to what was previously reported.