Comparison of optical to injection excitation in GaAs heterostructure lasers
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (12) , 5383-5388
- https://doi.org/10.1063/1.1663248
Abstract
By using the same GaAs–Ga1−xAlxAs heterostructure material to make both optically excited and junction lasers we have compared the performance of the two classes of lasers under pulsed room‐temperature operation. We find that junction lasers have higher differential quantum efficiencies for reasons which are probably inherent in the excitation technique. However, the power efficiencies are higher for the optically pumped samples; by optical excitation of a single heterostructure, we have obtained 20% power conversion efficiency, a factor of 2 better than previous results.This publication has 7 references indexed in Scilit:
- GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinementJournal of Applied Physics, 1974
- Optically pumped room-temperature GaAs lasersIEEE Journal of Quantum Electronics, 1973
- Spontaneous and stimulated recombination in p+-n-n+(AlGa)As-GaAs heterojunction laser diodesIEEE Journal of Quantum Electronics, 1973
- LOW-THRESHOLD LOC GaAs INJECTION LASERSApplied Physics Letters, 1971
- DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GaAs:Ge PLATELET LASERApplied Physics Letters, 1970
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- Liquid Phase Epitaxial Growth of Ga[sub 1−x]Al[sub x]As[sup 1]Journal of the Electrochemical Society, 1969