Mercury cadmium telluride junctions grown in situ by molecular‐beam epitaxy

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Abstract
The characterization of n‐isotype mercurycadmium telluride heterojunctions made i n s i t u by molecular‐beam epitaxy is reported first. The cadmium composition of each side is 0.3 for the top material and 0.21 for the bottom. Both sides were doped with indium. Strong rectification with an ideality factor varying from 1.8 to 2.5 is shown. The forward bias occurs when the wide‐band‐gap material is biased negatively. The preliminary results of the first homojunctions made by the same technique are then presented. The cadmium composition was 0.27. The bottom p‐type material was doped by stoichiometric deviation, whereas the top n‐type material was doped with silicon. The device is sensitive to infrared radiation and it is found that the doping concentration is not uniform. We suggest that generation–recombination is limiting the device operation at high temperatures.

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