Influence of Oxide Layers on the Determination of the Optical Properties of Silicon
- 1 June 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (6) , 2835-2839
- https://doi.org/10.1063/1.1661603
Abstract
Experimental reflectance data for silicon are corrected for the presence of a surface oxide layer and analyzed using the Kramers‐Kronig relation to yield a set of optical constants for oxide‐free silicon. For etched silicon samples exposed to the atmosphere for ∼ 1 h, this layer is 12–15 Å thick and has the approximate composition SiO. Absorption data are also given for epitaxial silicon on spinel and used as an aid in the analysis.This publication has 17 references indexed in Scilit:
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