Gold–silicon interface modification studies

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Abstract
We have performed ballistic electron emission microscopy measurements on the Au-Si system with and without controlled monolayer impurities at the interface. At moderate sample to scanning tunneling microscopy tip biases (< 2.5 V) we have observed, and at high biases (> 3 V) modified the local ballistic transmittance (BT), i.e. the scaling factor of the collector current versus voltage spectra, of the interface. Spatially, the modification typically consists of a region of decreased BT a few hundred angstrom in diameter surrounded by a ring of increased BT. No change in Schottky barrier height is found. A model is presented which describes the decrease in terms of Au-Si interdiffusion, and the enhancement in terms of a thinning of an impurity layer between the Au and Si; connections are made to observations of the unstressed system.

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