Formation of ain by nitrogen molecule ion implantation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 162-166
- https://doi.org/10.1016/s0168-583x(87)80034-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Formation of AlN by nitrogen ion implantationThin Solid Films, 1983
- The dependence of aluminum nitride film crystallography on sputtering plasma compositionJournal of Vacuum Science & Technology A, 1983
- Mechanism of ion beam induced mixing of layered solidsApplied Physics A, 1983
- Characteristics of the metal insulator semiconductor structure:AlN/SiApplied Physics Letters, 1981
- Criteria for bombardment-induced structural changes in non-metallic solidsRadiation Effects, 1975