Excess current in p – n junctions associated with surface states

26 July 1968

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 4 (15) , 305-307
https://doi.org/10.1049/el:19680237

Abstract

Surface effects are known to cause excess currents in p–n junctions. A quantitative model is proposed which shows that the essential contribution can be related to surface recombination velocity. An apparent exp (V/mU_T) dependence is found for this current component.

Keywords

MODEL
RECOMBINATION
EXP
V/MUT
JUNCTIONS ASSOCIATED
ASSOCIATED WITH SURFACE
EXCESS CURRENT
CAUSE EXCESS

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