Donor-acceptor transition in CuGaSe2
- 10 February 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (4) , 521-530
- https://doi.org/10.1088/0022-3719/14/4/023
Abstract
In a previous paper the authors (see J. Physique, vol.41, p.707, 1980) showed by kinetics measurements a donor-acceptor transition peaked at 1.59 eV in CuGaSe2. They confirm here the fundamental parameters of this emission by measurements in terms of temperature and excitation rate. They show the influence of weak phonon coupling on intra-pairs recombination. An original deconvolution method which takes account of this influence permits the authors to find the experimental spectra again.Keywords
This publication has 9 references indexed in Scilit:
- Evidence of a donor-acceptor type transition in CuGaSe2Journal de Physique, 1980
- Excitonic Structure of CuGaS2xSe2(1-x)and CuAlS2xSe2(1-x)Japanese Journal of Applied Physics, 1977
- Aspects of the band structure of CuGaand CuGaPhysical Review B, 1975
- Time resolved spectroscopy involving multiply ionizable donor-acceptor statesJournal of Physics C: Solid State Physics, 1973
- Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation IntensityPhysical Review B, 1972
- Hybridization of the Valence Bands of I-III-CompoundsPhysical Review B, 1972
- Pair Spectra Involving Si Donors in GaPPhysical Review B, 1969
- CuGaSe2 and AgInSe2: Preparation and properties of single crystalsJournal of Physics and Chemistry of Solids, 1966
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965