Radiative Recombination in Tin-Doped Germanium
- 1 April 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (5) , 2323-2324
- https://doi.org/10.1063/1.1657981
Abstract
Strong radiative recombination with 0.49 eV energy at 77°K is found in Ge containing Sn. It is proposed that this radiation is due to excitons bound to an isoelectronic Sn center.This publication has 1 reference indexed in Scilit:
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966