The influence of Ti and Zr additions on GaAs liquid phase epitaxial growth
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9) , 832-834
- https://doi.org/10.1063/1.92097
Abstract
Small additions of Zr and Ti to liquid Ga in the liquid phase epitaxial growth of GaAs caused and increased tendency to grow p‐type layers and produced high p‐type mobilities (200–400 cm2/V sec). The difference in behavior of the two additions was related to the respective oxide stability. The temperature dependence and the high values of the hole mobility suggest that the additions remove donor impurities rather than compensate them.Keywords
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