Single-Crystal Silicon on Spinel
- 1 February 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (2) , 734-739
- https://doi.org/10.1063/1.1708246
Abstract
Evidence is given which shows that silicon epitaxy has been achieved on the commercially available magnesia aluminate spinel by the pyrolysis of silane and reduction of SiCl4 in an atmosphere of hydrogen. Epitaxy as indicated by physical characteristics within the film as viewed optically has been confirmed with x‐ray data. The principal limitation to film quality appears to be the substrate quality. The epitaxial mechanism seems to be the same as postulated for the silicon sapphire system, i.e., a substitution of silicon for the metal ion, in this case filling a Mg+2 site and bonding to the oxygen atoms of the spinel. The following orientation relationships were obtained: (111)Si∥(111) spinel; (100)Si∥(100) spinel; and (110)Si∥(110) spinel.This publication has 5 references indexed in Scilit:
- The epitaxial deposition of silicon on quartzPhilosophical Magazine, 1964
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964
- Chemical Etching of Defect Structures in Alumina‐Rich Spinel Single CrystalsJournal of the American Ceramic Society, 1963
- Chemical Vapor Deposition of Tungsten at Low PressureJournal of the Electrochemical Society, 1962
- Physical Properties and Cation Arrangement of Oxides with Spinel Structures I. Cation Arrangement in SpinelsThe Journal of Chemical Physics, 1947