Phase formation in ion-irradiated and annealed Ni-rich Ni-Al thin films

Publisher Website
Google Scholar
Abstract
Phase formation was studied in ion‐irradiated multilayer and coevaporated Ni‐20 at. % Al films supported by Cu, Mo, and Ni transmission electron microscopy (TEM) grids. Irradiation with either 700‐keV Xe or 1.7‐MeV Xe, to doses sufficient to homogenize the multilayers (≥7.5×1015 cm−2), resulted in the formation of metastable supersaturated γ and HCP phases in both film types. Post‐irradiation annealing of multilayers at 450 °C for 1 h transformed the metastable phases to a two‐phase γ+γ′ microstructure. In the absence of Cu, the formation of γ′ appeared to proceed by a traditional diffusional growth mechanism, resulting in small (<50 Å) γ′ precipitates in γ matrix grains. The presence of Cu caused the formation of a dual‐phase γ+γ′ structure (i.e., distinct, equal‐sized grains of γ and γ′) during post‐irradiation annealing. It is suggested that copper affected the nucleation of γ′ precipitates and increased the kinetics of growth resulting in the dual‐phase morphology. Strong irradiation‐induced textures were observed in the multilayers that were less pronounced in the coevaporated films. The texture in the multilayers was attributed to the presence of a slight as‐evaporated texture combined with the enhanced atomic mobility due to the heat‐of‐mixing released during irradiation. The irradiation‐induced texture appeared to be necessary for the formation of the dual‐phase structure since it likely provided high‐diffusivity paths for Cu to diffuse into the film from the TEM grid

This publication has 34 references indexed in Scilit: