Temperature dependence of responsivity in closely compensated extrinsic infrared detectors
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (1) , 71-77
- https://doi.org/10.1109/t-ed.1980.19822
Abstract
Extrinsic infrared detectors which have closely compensated residual impurities shallower than the major dopant exhibit a large temperature dependence of the responsivity caused by changing occupation of these levels. A model is developed and its behavior is explored using indium-doped silicon as an example. The temperature dependence of the responsivity at low temperatures is found to be a series of plateaus for each overcompensated level. When exact compensation occurs, a unique peak of very high responsivity is predicted. The model is fitted to published Si: In detector data exhibiting such a series of plateaus and good agreement is found.Keywords
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