Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures
- 15 May 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (10) , 983-985
- https://doi.org/10.1063/1.95788
Abstract
We report successful molecular beam epitaxial growth of thin multiple quantum well structures of GaAs/InAs(100) involving 7.4% lattice mismatch. Cross-sectional transmission electron microscopy studies reveal well formed interfaces and low defect density.Keywords
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