GaN/SiC HBTs and related issues
- 27 January 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (2) , 265-270
- https://doi.org/10.1016/s0038-1101(99)00233-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°CMRS Internet Journal of Nitride Semiconductor Research, 1999
- Electrical characterization of GaN/SiC n-p heterojunction diodesApplied Physics Letters, 1998
- High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride EmitterMRS Internet Journal of Nitride Semiconductor Research, 1996