BSA Technology for sub-100nm deep base bipolar transistors

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 375-378
https://doi.org/10.1109/iedm.1987.191435

Abstract

This paper will describe a novel self-aligned technology, BSA (BSG Self-Aligned) technology. The BSA technology makes it possible to realize the self-aligned bipolar transistors having sub- 100nm deep base junction and to solve the problems in lateral and vertical scaling down of self-aligned transistors. The BSA technology is featured by the use of BSG film not only as a sidewall spacer but also as a diffusion source to form both the intrinsic base and p⁺-link regions by rapid thermal annealing (RTA), simultaneously. The typical BSA transistor having sub-100nm deep base junction showed 70 of hFE, 7V of BVCEOand 3V of BVEBO, respectively.

Keywords

BIPOLAR TRANSISTORS
BORON
SPACE TECHNOLOGY
ION IMPLANTATION
FABRICATION
ATOMIC LAYER DEPOSITION
ETCHING
NATIONAL ELECTRIC CODE
RAPID THERMAL ANNEALING
PARASITIC CAPACITANCE

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