A thermal-capillary mechanism for a growth rate limit in edge-defined film-fed growth of silicon sheets
- 1 August 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2) , 339-351
- https://doi.org/10.1016/0022-0248(86)90380-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Thermal-capillary analysis of small-scale floating zones: Steady-state calculationsJournal of Crystal Growth, 1986
- Finite Element Analysis of a Thermal‐Capillary Model for Liquid Encapsulated Czochralski GrowthJournal of the Electrochemical Society, 1985
- Comparison of finite element calculations and experimental measurements in edge-defined film-fed growth of silicon sheetsJournal of Crystal Growth, 1984
- High speed growth of sheet crystalsJournal of Crystal Growth, 1984
- Mechanisms for lateral solute segregation in edge-defined film-fed crystal growthJournal of Applied Physics, 1984
- Plastic deformation influence on stress generated during silicon sheet growth at high speedsJournal of Crystal Growth, 1983
- Analysis of operating limits in edge-defined film-fed crystal growthJournal of Crystal Growth, 1983
- Finite-element methods for steady solidification problemsJournal of Computational Physics, 1983
- The cooling of low-heat-resistance cylinders by radiationJournal of Engineering Mathematics, 1979
- The direction of growth of the surface of a crystal in contact with its meltJournal of Crystal Growth, 1975